US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Gate structures in semiconductor devices" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,951, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structures in semiconductor devices" was invented by Hsiang-Pi Chang (New Taipei, Taiwan), Huang-Lin Chao (Hillsboro, Ore.), Chung-Liang Cheng (Changhua County, Taiwan), Pinyen Lin (Rochester, N.Y.), Chun-Chun Lin (Hsinchu, Taiwan), Tzu-Li Lee (Huwei, Taiwan), Yu-Chia Liang (Hsinchu, Taiwan), Duen-Huei Hou (Hsinchu, Taiwan), Wen-Chung Liu (Hsinchu, Taiwan) and Chun-I Wu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with different configurations of gate structures and a method of fabricating the same are...