US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Forming epitaxial structures in fin field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,948, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Forming epitaxial structures in fin field effect transistors" was invented by Chia-Ling Chan (New Taipei, Taiwan), Derek Chen (Taipei, Taiwan), Liang-Yin Chen (Hsinchu, Taiwan) and Chien-I Kuo (Chiayi County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming source/drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer o...