US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "EUV radiation source apparatus for lithography" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,510,827, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"EUV radiation source apparatus for lithography" was invented by Yu-Chih Chen (Pingtung, Taiwan), Po-Chung Cheng (Longxing Village, Taiwan), Li-Jui Chen (Hsinchu, Taiwan), Shang-Chieh Chien (New Taipei, Taiwan), Sheng-Kang Yu (Hsinchu, Taiwan) and Wei-Chun Yen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in th...