ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,071, issued on Dec. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor memory device and method for manufacturing the same" was invented by Meng-Han Lin (Hsinchu, Taiwan), Bo-Feng Young (Hsinchu, Taiwan), Han-Jong Chia (Hsinchu, Taiwan) and Sai-Hooi Yeong (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, first and second stack units disposed over the semiconductor substrate, and a feature disposed between the first and second stack units. Each of the first and second stack units includes at least one stack that includes a condu...