ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,079, issued on Dec. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with backside power rail and methods of fabrication thereof" was invented by Cheng-Wei Chang (Taipei, Taiwan), Shahaji B. More (Hsinchu, Taiwan), Yi-Ying Liu (Hsinchu, Taiwan) and Yueh-Ching Pai (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first side and a second side opposing the first side, a source/drain epitaxial feature disposed adjacent the first side of the substrate, wherein the source/...