US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "Semiconductor device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,470, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of fabricating the same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan), Weng Chang (Hsin-Chu, Taiwan) and Chi-On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate, a first transistor and a second transistor is provided. The first transistor includes a first gate structure over the first semiconductor fin. The first gate structure includes a first high-k layer and a first work function layer sequentially disposed on the...