ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,461, issued on Dec. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Bo-Wen Hsieh (Miaoli County, Taiwan) and Wen-Hsin Chan (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a first semiconductor fin, a second semiconductor fin, an isolation structure, and a gate structure. The first and second semiconductor fins extend upwards from a top surface of the semiconductor substrate. The isolation structure is between the first semiconductor fin and the second semiconductor fin. The gate structure inc...