US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "RRAM with post-patterned treated memory films to provide improved endurance characteristics and methods for forming" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,602, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"RRAM with post-patterned treated memory films to provide improved endurance characteristics and methods for forming" was invented by Watson Liu (Hsinchu, Taiwan), Fu-Ting Sung (Yangmei, Taiwan), Hsia-Wei Chen (Taipei, Taiwan), Yu-Wen Liao (New Taipei, Taiwan) and Wen-Ting Chu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first electrode comprising a first metallic material; a memory film including at least one dielectric metal oxide material and contacting the first electrode; and a second e...