US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "Multi-liner TSV structure and method forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,058, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Multi-liner TSV structure and method forming same" was invented by Ming-Fa Chen (Taichung, Taiwan), Chin-Shyh Wang (Hsinchu, Taiwan) and Chao-Wen Shih (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes etching a substrate to form an opening, depositing a first dielectric liner extending into the opening, and depositing a second dielectric liner over the first dielectric liner. The second dielectric liner extends into the opening. A conductive material is filled into the opening. The method further includes performing ...