US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 23 for "Multi-layer channel structures and methods of fabricating the same in field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,440, issued on Dec. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multi-layer channel structures and methods of fabricating the same in field-effect transistors" was invented by Guan-Lin Chen (Hsinchu County, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first stack of semiconductor layers disposed over a semiconductor substrate, where the first stack of semiconductor layers includes a first SiGe layer and a plurality ...