US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 23 for "Method of making polysilicon structure including protective layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,472, issued on Dec. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of making polysilicon structure including protective layer" was invented by Yu-Shao Cheng (Hsinchu, Taiwan), Chui-Ya Peng (Hsinchu, Taiwan), Kung-Wei Lee (Hsinchu, Taiwan) and Shin-Yeu Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor device includes forming a first polysilicon structure over a first portion of a substrate. The method further includes forming a first spacer on a sidewall of the first polysilicon structure, wherein the first spacer has a concave corner region between ...