US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "Memory devices and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,409, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices and methods of manufacturing thereof" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first and a second areas. The first area includes a plurality of first conductive stripes extending along a lateral direction and spaced from one another along a vertical direction, a first memory layer extending along the vertical direction, a first semiconductor layer extending along the vertical direction and coupled to a portion of...