US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 23 for "Memory cell and method of operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,871, issued on Dec. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory cell and method of operating the same" was invented by Bo-Feng Young (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu, Taiwan), Chao-I Wu (Hsinchu, Taiwan), Chih-Yu Chang (Hsinchu, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a read word line extending in a first direction, a write transistor, and a read transistor coupled to the write transistor. The read transistor includes a ferroelectric layer, a drain terminal of the read transistor directly connected to the read word line...