US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 23 for "Gap filling method in semiconductor manufacturing process" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,029, issued on Dec. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gap filling method in semiconductor manufacturing process" was invented by Yi-Hsiu Chen (Hsinchu, Taiwan), Shao-An Wang (Hsinchu, Taiwan), Kenichi Sano (Hsinchu, Taiwan) and Andrew Joseph Kelly (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for filling a gap in a semiconductor structure includes: forming the gap between two raised portions of the semiconductor structure, the gap having a bottom surface and two lateral surfaces each extending upwardly from the bottom surface along one of the raised portions to terminat...