US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "BCD device layout area defined by a deep trench isolation structure and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,484, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"BCD device layout area defined by a deep trench isolation structure and methods for forming the same" was invented by Tsung-Yu Yang (Tainan, Taiwan) and Po-Wei Liu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Devices and methods of manufacture for a deep trench layout area-saving semiconductor structure for use with bipolar-CMOS-DMOS (BCD) devices. A semiconductor device may comprise a first BCD device formed within a first perimeter of a first BCD layout area, and a deep trench isolation structure defining the first perimeter of...