US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "Asynchronous read circuit using delay sensing in magnetoresistive random access memory (MRAM)" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,870, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Asynchronous read circuit using delay sensing in magnetoresistive random access memory (MRAM)" was invented by Jack Liu (Taipei, Taiwan) and Charles Chew-Yuen Young (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments of the present disclosure relate to a memory device. The memory device includes an active current path including a data storage element; and a reference current path including a reference resistance element. The reference resistance element has a resistance that differs from a resistance of the data stor...