ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,483, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor devices and methods of manufacturing thereof" was invented by Shih-Yao Lin (New Taipei, Taiwan), Hsiao Wen Lee (Hsinchu, Taiwan) and Chao-Cheng Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of channel layers vertically spaced from one another, a gate structure wrapping around each of the plurality of channel layers; and an inner spacer that is disposed along sidewalls of a lower portion of the gate structure. The inner spacer curves toward the lower portion of the gate ...