US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 2 for "Semiconductor device structure with air gap and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,506, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device structure with air gap and method for forming the same" was invented by Yi-Ruei Jhan (Keelung, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a first nanostructure stack and a second nanostructure stack over the first fin and the second fin respectiv...