ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,510, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of forming the same" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Te-An Chen (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a metal gate and a poly gate. The substrate includes a first region and a second region. The metal gate is disposed on the first region of the substrate. The poly gate is disposed on the second region of the substrate. A gate area of the poly gate is greater than that of the metal gate."
The patent was filed on Aug. 12, 2020, u...