US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,498, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Chun-Yen Lin (Hsinchu, Taiwan), Wei-Cheng Lin (Taichung, Taiwan) and Jiann-Tyng Tzeng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: forming a first channel structure through a first gate structure; forming a first source/drain structure coupled to the first channel structure at a first surface of the first gate structure; before the first source/drain structure is formed, forming a first isolation layer at a second surface of the first gat...