US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 2 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,049, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Chia-Cheng Ho (Hsinchu, Taiwan), Chun-Chieh Lu (Taipei, Taiwan) and Chih-Sheng Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor fin, a gate structure, a capacitor structure, a conductive contact, and a hard mask layer. The gate structure is disposed across the semiconductor fin. The capacitor structure is disposed on the gate structure. The capacitor structure includes a ferroelectric layer. The conductive conta...