US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 2 for "PNP controlled ESD protection device with high holding voltage and snapback" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,520, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"PNP controlled ESD protection device with high holding voltage and snapback" was invented by Jing-Ying Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ESD protection device protects a circuit from TLPs between a first terminal and a second terminal. The device includes an NPN discharge structure and a PNP triggering device. The first terminal is coupled to the p-doped emitter and the n-doped base of the PNP triggering device and also the n-doped emitter of the NPN discharge structure. The second terminal is coupled to the n-do...