US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "Method of manufacturing semiconductor devices and semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,454, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices and semiconductor devices" was invented by Hsiao-Chun Chang (Hukou Township, Taiwan) and Guan-Jie Shen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device including a Fin FET, a fin structure, which has an upper fin structure made of SiGe and a bottom fin structure made of a different material than the upper fin structure, is formed, a cover layer is formed over the fin structure, a thermal operation is performed on the fin structure cov...