US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "Metal gate structure and methods of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,496, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Metal gate structure and methods of fabricating thereof" was invented by I-Wei Yang (Yilan County, Taiwan), Chih-Chang Hung (Hsinchu, Taiwan), Ryan Chia-Jen Chen (Hsinchu, Taiwan), Ming-Ching Chang (Hsinchu, Taiwan) and Shu-Yuan Ku (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of forming thereof includes a first fin and a second fin each extending from a substrate. A first gate segment is disposed over the first channel and a second gate segment is disposed over the second channel. An interl...