US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "In-situ deposition and densification treatment for metal-comprising resist layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,487,523, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"In-situ deposition and densification treatment for metal-comprising resist layer" was invented by Yi-Chen Kuo (Hsinchu, Taiwan), Chih-Cheng Liu (Hsinchu, Taiwan), Yen-Yu Chen (Hsinchu, Taiwan), Jr-Hung Li (Hsinchu County, Taiwan), Chi-Ming Yang (Hsinchu, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Metal-comprising resist layers (for example, metal oxide resist layers), methods for forming the metal-comprising resist layers, and lithography methods that implement the metal-comprising resist layers are...