US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "Extreme ultraviolet (EUV) radiation source apparatus, EUV lithography system, and method for generating extreme ultraviolet radiation" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,487,531, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Extreme ultraviolet (EUV) radiation source apparatus, EUV lithography system, and method for generating extreme ultraviolet radiation" was invented by Hsin-Fu Tseng (Hsinchu County, Taiwan), Chih-Chiang Tu (Taoyuan, Taiwan), Chih-Wei Wen (Tainan, Taiwan), Chien-Hsing Lu (Tainan, Taiwan) and Tzu Jeng Hsu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An EUV radiation source apparatus includes an EUV source vessel including a chamber; a crucible disposed in the chamber; a tin layer disposed on the crucible; a catcher disposed in t...