US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 16 for "Three-dimensional memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,622, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional memory device and method" was invented by Feng-Cheng Yang (Zhudong Township, Taiwan), Meng-Han Lin (Hsinchu, Taiwan), Sheng-Chen Wang (Hsinchu, Taiwan), Han-Jong Chia (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conducti...