US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 16 for "SRAM internal DFT circuit without output hold degradation" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,958, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"SRAM internal DFT circuit without output hold degradation" was invented by Yoshisato Yokoyama (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of operating the semiconductor device are disclosed. In one aspect, the semiconductor device includes a memory circuit configured to receive a clock signal and generate an output signal. The memory circuit includes a timing delay circuit. The semiconductor device includes a design-for-test (DFT) circuit comprising a shadow latch. The DFT circuit is configur...