ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,158, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and manufacturing method thereof" was invented by Shuo-Mao Chen (New Taipei, Taiwan), Feng-Cheng Hsu (New Taipei, Taiwan) and Shin-Puu Jeng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: forming a first interposer die, wherein the first interposer die comprises a first substrate and a first redistribution layer (RDL) over the first substrate; bonding the first interposer die to a second RDL; encapsulating the second RDL and the first interposer die with a first encapsulating layer; th...