ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,647, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of manufacture" was invented by Wei-Ting Chien (Hsinchu, Taiwan), Su-Hao Liu (Jhongpu Township, Taiwan), Liang-Yin Chen (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with some embodiments, a source/drain contact is formed by exposing a source/drain region through a first dielectric layer and a second dielectric layer. The second dielectric layer is recessed under the first dielectric layer, and a silicide region is fo...