US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,671, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Li-Zhen Yu (New Taipei, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan), Meng-Huan Jao (Taichung, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a front-side interconnection structure, and a backside via. The gate structure ...