ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,645, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Ze-Sian Lu (Hsinchu, Taiwan), Ting-Wei Chiang (New Taipei, Taiwan), Pin-Dai Sue (Tainan, Taiwan), Jung-Hsuan Chen (Hsinchu, Taiwan) and Hui-Wen Li (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first multi-gate field effect transistor (FET) disposed over a substrate, the first multi-gate FET including a first active region; and a second multi-gate FET disposed over the first multi-gate FET, the second multi-gate FET including a second active region. The first...