ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,164, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor circuit for memory device and method of manufacturing the same" was invented by Chin-Ming Fu (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor component for a memory device is provided. The semiconductor component comprises a first active region extending in a first direction; a second active region extending in the first direction; a first conductive layer disposed across the first active region and the second active region, in a second direction substantially perpendicular to the first direc...