US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "Selective silicide for stacked multi-gate device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,657, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Selective silicide for stacked multi-gate device" was invented by Wei-Yip Loh (Hsinchu, Taiwan), Hong-Mao Lee (Hsinchu, Taiwan), Harry Chien (Chandler, Ariz.) and Chih-Wei Chang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. A method of the present disclosure includes receiving a workpiece that includes a bottom source/drain feature over a substrate, a first dielectric layer over the bottom source/drain feature, a top source/drain feature over the first di...