US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "Overhanging source/drain contact" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,655, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Overhanging source/drain contact" was invented by Chung-Hao Cai (Hsinchu, Taiwan), Yen-Jun Huang (Hsinchu, Taiwan), Ting Fang (Hsinchu, Taiwan), Chia-Hsien Yao (Hsinchu, Taiwan), Cheng-Ming Lee (Taoyuan County, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first fin structure and a second fin structure over a substrate, a first source/drain feature...