US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 16 for "Non-volatile memory device and manufacturing technology" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,842, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Non-volatile memory device and manufacturing technology" was invented by Chern-Yow Hsu (Chu-Bei, Taiwan), Chung-Chiang Min (Zhubei, Taiwan) and Shih-Chang Liu (Alian Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device with hard mask insulator and its manufacturing methods are provided. In some embodiments, the memory device includes a memory cell stack disposed over a substrate. The memory cell stack includes a bottom electrode layer, a resistance switching dielectric layer over the bottom electrode layer, and a top ele...