US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "Nanostructure field-effect transistor device and method of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,689, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Nanostructure field-effect transistor device and method of forming" was invented by Te-Yang Lai (Hsinchu, Taiwan), Hsueh-Ju Chen (Taipei, Taiwan), Tsung-Da Lin (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming, in a first device region of the semiconductor device, first nanostructures over a first fin that protrudes above a substrate; forming, in a second device region of the semiconductor device, second nanostructures over a second fin tha...