ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,934, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of operating the same" was invented by Chien-Yuan Chen (Hsinchu, Taiwan), Che-An Lee (Keelung, Taiwan), Hau-Tai Shieh (Hsinchu, Taiwan) and Cheng Hung Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a method of operating the memory device are disclosed. In one aspect, the memory device includes a bit line connected to a plurality of memory cells of a memory array, the bit line having a first length. The memory device includes a first programmable bit line having a second length deter...