ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,670, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Isolation structure for semiconductor device" was invented by Han-Yu Lin (Hsinchu, Taiwan), Che-Chi Shih (Hsinchu, Taiwan), Szu-Hua Chen (Hsinchu, Taiwan), Kuan-Da Huang (Hsinchu, Taiwan), Cheng-Ming Lin (Hsinchu, Taiwan), Tze-Chung Lin (Hsinchu, Taiwan), Li-Te Lin (Hsinchu, Taiwan), Wei-Yen Woon (Hsinchu, Taiwan) and Pinyen Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first semiconductor structure, a second semiconductor structure, and an isolation structure which is disposed between the first and se...