US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 16 for "Interconnect structures for semiconductor devices and methods of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,679, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structures for semiconductor devices and methods of manufacturing the same" was invented by Yu-Lien Huang (Jhubei, Taiwan), Ching-Feng Fu (Taichung, Taiwan), Guan-Ren Wang (Hsinchu, Taiwan) and Che-Ming Hsu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for making a semiconductor device includes forming a first patterned structure over an interlayer dielectric. The interlayer dielectric overlays a first source/drain structure and a second source/drain structure. The first patterned structure extends along a f...