US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 16 for "Interconnect structure with hybrid barrier layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,173, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structure with hybrid barrier layer" was invented by Shu-Wei Li (Hsinchu, Taiwan), Shin-Yi Yang (New Taipei, Taiwan), Ming-Han Lee (Taipei, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip including a lower conductive wire within a first dielectric layer over a substrate. A second dielectric layer is over the first dielectric layer. A conductive via is over the lower conductive wire and within the second dielectric layer. A conductive liner l...