ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,700, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit, semiconductor device having stop segment in connection region between logic region and memory cell region" was invented by Yu-Wei Jiang (Hsinchu, Taiwan), Chieh-Fang Chen (Hsinchu County, Taiwan), Yen-Chung Ho (Hsinchu, Taiwan), Pin-Cheng Hsu (Hsinchu County, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/dra...