US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "Hardmask formation with hybrid materials in semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,690, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Hardmask formation with hybrid materials in semiconductor device" was invented by Chung-Ting Ko (Kaohsiung, Taiwan), Sung-En Lin (Hsinchu County, Taiwan) and Chi-On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, first and second semiconductor strips, a dummy fin structure, first and second channel layers, a gate structure, and crystalline and amorphous hard mask layers. The first and second semiconductor strips extend upwardly from the substrate and each has a length extending ...