US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "Gallium nitride-based device with step-wise field plate and method making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,644, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Gallium nitride-based device with step-wise field plate and method making the same" was invented by Wei Wang (Hsinchu, Taiwan), Wei-Chen Yang (Hsinchu, Taiwan), Yao-Chung Chang (Zhubei, Taiwan), Ru-Yi Su (Yunlin County, Taiwan), Yen-Ku Lin (Hsinchu, Taiwan), Chuan-Wei Tsou (Hsinchu, Taiwan) and Chun Lin Tsai (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure. The semiconductor structure includes a gallium nitride (GaN) layer on a substrate; an aluminum gallium nitride (AlGaN) ...