US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "FinFET devices with dummy fins having multiple dielectric layers" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,696, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"FinFET devices with dummy fins having multiple dielectric layers" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; semiconductor fins over the substrate and oriented lengthwise along a first direction; first multi-dielectric-layer (MDL) fins and second MDL fins over the substrate and oriented lengthwise along the first direction, wherein the first and the second MDL fins are intermixed with the semiconductor fins, wherein each of the first MDL fins and...