US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 16 for "Field effect transistor with merged epitaxy backside cut and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,660, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with merged epitaxy backside cut and method" was invented by Wei Ju Lee (Hsinchu, Taiwan), Zhi-Chang Lin (Hsinchu, Taiwan), Chun-Fu Cheng (Hsinchu, Taiwan), Chung-Wei Wu (Hsinchu, Taiwan) and Zhiqiang Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, a first semiconductor channel over the substrate, and a second semiconductor channel over the substrate and laterally separated from the first semiconductor channel. A gate structure covers and wraps around the first semiconductor...