US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 16 for "Dual silicide layers in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,687, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dual silicide layers in semiconductor devices" was invented by Chen-Han Wang (Zhubei, Taiwan), Keng-Chu Lin (Ping-Tung, Taiwan) and Tsungyu Hung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The method includes forming first and second fin structures on a substrate, forming n- and p-type source/drain (S/D) regions on the first and second fin structures, respectively, forming first and second oxidation sto...