US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)" (California Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,836, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)" was invented by Vignesh Sundar (Sunnyvale, Calif.), Yu-Jen Wang (San Jose, Calif.), Luc Thomas (San Jose, Calif.) and Guenole Jan (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2 configuration wherein a first tunnel barrier (TB1) has a substantially lower resistancexarea (RA1) product than RA2 for an overlying second tunnel barrier (TB2) to provide an acceptable mag...