US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 5 for "Three-dimensional memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,639, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional memory device and method" was invented by TsuChing Yang (Hsinchu, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan), Kuo Chang Chiang (Hsinchu, Taiwan), Sheng-Chih Lai (Hsinchu, Taiwan) and Yu-Wei Jiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a three-dimensional (3D) memory device includes: forming, over a substrate, a layer stack having alternating layers of a first conductive material and a first dielectric material; forming trenches extending vertically through the layer stack from an upper ...