ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,165, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure and method of manufacturing the same" was invented by Jen-Yuan Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first device structure, an oxide based layer, and a first auxiliary bond pad. The first device structure includes a first bonding layer. The oxide based layer is bonded to the first bonding layer of the first device structure. The first auxiliary bond pad is at an interface between the oxide based layer and the first bonding layer of the first device structur...